2SA1907 查看數據表（PDF） - Inchange Semiconductor
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2SA1907 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-2A;IB=-0.2 A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-6V; IC=0
IC=-2A ; VCE=-4V
IC=-0.5A ; VCE=-12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A;RL=10Ω
IB1=-IB2=-0.3A;VCC=-30V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1907
MIN TYP. MAX UNIT
-80
V
-0.5
V
-10
μA
-10
μA
50
180
20
MHz
150
pF
0.18
μs
1.10
μs
0.21
μs
2
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