SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
tf
Fall time
ICP=4A ;IB1(end)=0.8A
Product Specification
2SD1545
MIN TYP. MAX UNIT
3.0
5.0
V
1.5
V
10
µA
1
mA
8
20
3
MHz
165
pF
0.5
1.0
µs
2