DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STPIC6C595MTR 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STPIC6C595MTR
STMICROELECTRONICS
STMicroelectronics 
STPIC6C595MTR Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
STPIC6C595
Figure 9. Reverse recovery current test circuits
Typical operating circuit
Figure 10. Source drain diode waveform
Note: 1 A) The VGG amplitude and RG are adjusted for di/dt = 10 A/μs. A VGG double-pulse train is
used to set IF = 0.1 A. where t1 = 10 μs, t2 = 7 μs and t3 = 3 μs
2 B) The drain terminal under test is connected to the TPK test point. All other terminals are
connected together and connected to the TPA test point.
3 C) IRM = maximum recovery current.
11/22

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]