BDW94B 查看數據表（PDF） - New Jersey Semiconductor

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BDW94B

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BDW94/A/B/C

DESCRIPTION

• Collector Current -lc= -12A

• Collector-Emitter Sustaining Voltage-

: VCEO(sus) = -45V(Min)- BDW94; -60V(Min)- BDW94A

-SOV(Min)- BDW94B; -100V(Min)- BDW94C

• Complement to Type BDW93/A/B/C

APPLICATIONS

• Designed for hammer drivers, audio amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25-C)

SYMBOL

PARAMETER

VALUE

UNIT

BDW94

-45

VCBO

Collector-Base

Voltage

BDW94A

-60

V

BDW94B

-80

BDW94C

-100

BDW94

-45

VCEO

Collector-Emitter

Voltage

BDW94A

-60

V

BDW94B

-80

BDW94C

-100

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

ICM

Collector Current-Peak

-12

A

-15

A

la

Base Current

Collector Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

-0.2

A

80

W

150

•c

Tstg

Storage Temperature Range

-65-150 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.5

UNIT

•c/w

Quality Semi-Conductors

r

i'ii

12 3

-vw — l-wv — I — *

R'

12

-3

"H 1.BASE

2. COLLECTOR

3. EMITTER

TO-220C package

r , rJTL,

jlUl^t

A

/

MOOV

*1

*/* soi'.

. \^j"*~L

K

\

, H G *-

R|*-

V

tc ! j

mm

DIM MIN MAX

A 15.70 15.90

B 9.90 10.10

C 4.20 4.40

D 0.70 0.90

F 3.40 3.60

0 4.98 5.18

H 2.70 2.90

J 0.44 0.46

K 13.20 13.40

I 1.10 1.30

Q 2.70 2.90

R 2.50 2.70

S 1.29 1.31

U 6.45 6.65

V 8.66 8.86

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