BDW94C(2005) 查看數據表（PDF） - Fairchild Semiconductor

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BDW94C
(Rev.:2005)

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Conditions

VCEO(sus)

ICBO

ICEO

IEBO

hFE

Collector-Emitter Sustaining Voltage

: BDW94

: BDW94C

Collector Cut-off Current

: BDW94

: BDW94C

Collector Cut-off Current

: BDW94

: BDW94C

Emitter Cut-off Current

DC Current Gain *

VCE(sat)

VBE(sat)

VF

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

Parallel Diode Forward Voltage *

* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed

IC = -100mA, IB = 0

VCB = -45V, IE = 0

VCB = -100V, IE = 0

VEB = -45V, IB = 0

VCE = -100V, IB = 0

VEB = -5V, IC = 0

VCE = -3V, IC = -3A

VCE = -3V, IC = -5A

VCE = -3V, IC = -10A

IC = -5A, IB = -20mA

IC = -10A, IB = -100mA

IC = -5A, IB = -20mA

IC = -10A, IB = -100mA

IF = -5A

IF = -10A

Min. Typ. Max Units

-45

V

-100

V

-100

µA

-100

µA

-1

mA

-1

mA

-2

mA

1000

750

100

20000

-2

V

-3

V

-2.5

V

-4

V

-1.3

-2

V

-1.8

-4

V

BDW94/C Rev. B

2

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