K2055 查看數據表（PDF） - NEC => Renesas Technology

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K2055

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

Drain Cut-Off Current

IDSS

Gate Leakage Current

IGSS

Gate Cut-Off Voltage

VGS(off)

Forward Transfer Admittance

|yfs|

Drain to Source On-State Resistance RDS(on)1

Drain to Source On-State Resistance RDS(on)2

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

TEST CONDITIONS

VDS = 100 V, VGS = 0

VGS = ±20 V, VDS = 0

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 1.0 A

VGS = 4 V, ID =1.0 A

VGS = 10 V, ID = 1.0 A

VDS = 10 V, VGS = 0,

f = 1.0 MHz

VDD = 10 V, ID = 1.0 A

VGS(on) = 10 V, RG = 10 Ω

RL = 10 Ω

2SK2055

MIN.

0.8

2.0

TYP.

1.2

0.28

0.24

530

150

30

5

50

90

15

MAX.

1.0

±10

2.0

0.45

0.35

UNIT

µA

µA

V

S

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

2

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