BSP318S(2008) 查看數據表（PDF） - Infineon Technologies
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BSP318S Datasheet PDF : 9 Pages
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Rev 2.2
BSP318S
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, V = 1 V
Gate charge at VGS = 5 V
VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V , ID = 2.6 A
QG(th)
-
Qg(5)
-
Qg
-
V(plateau) -
0.4 0.6 nC
7
10
14 20
3.6
-V
Parameter
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
Inverse diode direct current,pulsed
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 5.2 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
IS
-
-
2.6 A
ISM
-
- 10.4
VSD
- 0.95 1.2 V
trr
-
50 75 ns
Qrr
-
0.1 0.15 µC
Page 4
2008-03-21
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