BSP318S 查看數據表（PDF） - Infineon Technologies
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BSP318S Datasheet PDF : 9 Pages
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Typ. capacitances
C = f(VDS)
parameter: VGS=0 V, f=1 MHz
10 3
pF
Final data
BSP318S
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 2 BSP318S
A
Ciss
10 1
10 2
Coss
Crss
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
5 10 15 20 25 30 V 40
VDS
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Avalanche Energy EAS = f (Tj)
parameter: ID = 2.6 A, VDD = 25 V
RGS = 25 Ω
65
mJ
55
Typ. gate charge
VGS = f (QGate)
parameter: ID = 2.6 A pulsed
BSP318S
16
V
50
45
40
35
30
25
20
15
10
5
0
20
40
60
80 100 120 °C
160
Tj
12
10
8
0,2 VDS max
6
0,8 VDS max
4
2
0
0
4
8
12
16 nC
24
QGate
Page 7
1999-10-28
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