BYS11-90(2000) 查看數據表（PDF） - Vishay Semiconductors
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BYS11-90 Datasheet PDF : 4 Pages
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BYS11–90
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
2.0
RthJA=25K/W
1.6
1.2
RthJA=100K/W
0.8
2.0
VR = 0 V, Half Sinewave
1.6
RthJA=25K/W
1.2
100K/W
0.8
0.4
0
0
95 9715
VR = VR RM
40
80
120 160 200
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0.4 125K/W
0
0
95 9718
150K/W
40
80
120 160 200
Tamb – Ambient Temperature ( °C )
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
1000
100
VR = VR RM
10.000
1.000
Tj = 150°C
10
0.100
Tj = 25°C
1
0.010
0.1
0
95 9716
40
80
120 160 200
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs. Junction Temperature
2.0
VR = VR RM, Half Sinewave, RthJA=25K/W
1.6
1.2
0.8
0.4
0
0
40
80
120 160 200
95 9717
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
16469
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
180
160
f=1MHz
140
120
100
80
60
40
20
16470
0
0.1
1.0
10.0
VR – Reverse Voltage ( V )
100.0
Figure 6. Diode Capacitance vs. Reverse Voltage
www.vishay.com
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Document Number 86014
Rev. 3, 08-Sep-00
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