STPS1L30M(2003) 查看數據表（PDF） - STMicroelectronics
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STPS1L30M Datasheet PDF : 5 Pages
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STPS1L30M
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
1.E+02
Tj=150°C
Tj=125°C
1.E+01
1.E+00
Tj=100°C
Tj=75°C
Tj=50°C
1.E-01
Tj=25°C
VR(V)
1.E-02
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Fig. 8: Reverse leakage current versus junction
temperature (typical values).
IR(mA)
1.E+03
VR=30V
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0
Tj(°C)
25
50
75
100
125
150
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
1000
F=1MHz
Vosc=30mV
Tj=25°C
100
10
1
VR(V)
10
100
Fig. 10: Forward voltage drop versus forward
current.
IFM(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00 0.05
0.10
Tj=85°C
(Maximum values)
Tj=85°C
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm, typical values).
Rth(j-a)(°C/W)
250
200
150
100
50
0
0
S(mm²)
20 40 60 80 100 120 140 160 180 200
4/5
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