BDX63C(2012) 查看數據表（PDF） - Comset Semiconductors

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BDX63C
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX63 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

VCEO(SUS)

ICEO

Collector-Emitter Breakdown

Voltage (*)

Collector Cutoff Current

IC=0.1 A

IB=0

L=25mH

VCE=30 V

VCE=40 V

VCE=50 V

VCE=60 V

IEBO

Emitter Cutoff Current

VBE=5 V

ICBO

VCE(SAT)

VCBO=60 V

Collector-Base Cutoff Current

VCBO=400 V

TCASE=200°C

VCBO=80 V

VCBO=50 V

TCASE=200°C

VCBO=100 V

VCBO=60 V

TCASE=200°C

VCBO=120 V

VCBO=70 V

TCASE=200°

Collector-Emitter saturation

Voltage (*)

IC=3.0 A

IB=12 mA

VF

Forward Voltage (pulse

method)

IF=3 A

VBE

Base-Emitter Voltage (*)

IC=3.0 A

VCE=3V

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

BDX63

BDX63A

BDX63B

BDX63C

Min Typ Max Unit

60 -

-

80 -

100 -

-

-

V

120 -

-

-

-

-

-

-

-

0.5 mA

-

-

-

- 5.0 mA

-

- 0.2

-

-

2

-

- 0.2

-

-

2

-

-

- 0.2

-

-

2

-

- 0.2

-

-

2

-

-

2

V

- 1.2 -

V

-

- 2.5 V

24/10/2012

COMSET SEMICONDUCTORS

2|4

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