KTA1668 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

零件编号

产品描述 (功能)

生产厂家

KTA1668

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

KTA1668 TRANSISTOR(PNP)

FEATURES

z High voltage: VCEO=-60V

z High transistors frequency

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1

A

PC

Collector power dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

V(BR)CBO IC=-0.1mA,IE=0

Collector-emitter breakdown voltage

V(BR)CEO IC=-1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=-0.1mA,IC=0

Collector cut-off current

ICBO

VCB=-50V,IE=0

Emitter cut-off current

IEBO

VEB=-4V,IC=0

DC current gain

hFE1

hFE2

VCE=-2V,IC=-50mA

VCE=-2V,IC=-1A

Collector-emitter saturation voltage

VCE(sat) IC=-500mA,IB=-50mA

Base-emitter saturation voltage

VB E(sat) IC=-500mA,IB=-50mA

Transition frequency

fT

VCE=-10V,IC=-50mA, f=100MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

CLASSIFICATION of hFE1

Rank

Range

Marking

O

60-120

JO

Y

100- 200

JY

Min Typ

-80

-60

-5

60

30

150

12

Max Unit

V

V

V

-0.1 μA

-0.1 μA

320

-0.7

V

-1.2

V

MHz

pF

GR

160-320

JGR

www.cj-elec.com

1

DA,,NJouvn,20154

Share Link: