MJ21194 查看數據表（PDF） - SavantIC Semiconductor

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MJ21194

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

MJ21194

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCE(sat)-1 Collector-emitter saturation voltage IC=8A; IB=0.8A

VCE(sat)-2 Collector-emitter saturation voltage IC=16A; IB=3.2A

VBE(ON) Base-emitter on voltage

IC=8A ; VCE=5V

ICEX

Collector cut-off current

VCE=250V; VBE(off)=1.5V

ICEO

Collector cut-off current

VCE=200V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=8A ; VCE=5V

hFE-2

DC current gain

IC=16A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V,f=1MHz

COB

Collector output capacitance

Is/b

Second breakdown current

with base forward biased

f=1MHz;VCB=10V,IE=0

VCE=50V;t=1s(non-repetitive)

VCE=80V;t=1s(non-repetitive)

MIN TYP. MAX UNIT

250

V

1.4

V

4.0

V

2.2

V

100

µA

100

µA

100

µA

25

75

8

4

MHz

500

pF

5.0

2.5

A

2

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