BR1008 查看數據表（PDF） - New Jersey Semiconductor

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BR1008

SILICON BRIDGE RECTIFIERS

New Jersey Semiconductor 

RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )

FIG.1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

J

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

^

^ \ HEAT-SINKMOUN

3 2" x 3.2" x 0.12"THK

\, Tc

50

75

100 125 150

1

(8,2cn1 x8.2cm x 0.3c T>) Al -PLATE

2

i

2

4 6 10 20 40 60 100

CASE TEMPERATURE, ( °C)

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

PER DIODE

100

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE, VOLTS

100 120 140

PERCENT .OF RATED

REVERSE VOLTAGE, (%)

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