IXFX21N100Q 查看數據表（PDF） - IXYS CORPORATION

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IXFX21N100Q

HiPerFET™ Power MOSFETs Q-CLASS

IXYS CORPORATION 

IXFK 21N100Q

IXFX 21N100Q

Fig. 7. Gate Charge Characteristic Curve

Fig. 8. Capacitance Curves

10.0

7.5

VDS = 500 V

ID = 10.5 A

IG = 10 mA

5.0

2.5

0.0

0

25 50 75 100 125 150 175

Gate Charge - nC

Fig. 9. Source Current vs. Source to Drain Voltage

25

10000

5000

2500

1000

500

250

100

50

0

Ciss

Coss

f = 1MHz

Crss

5 10 15 20 25 30 35 40

VDS - Volts

20

15

TJ = 125oC

10

TJ = 25oC

5

0

0.2

0.300

0.100

0.4

0.6

0.8

1.0

VSD - Volts

Fig. 10. Thermal Impedance

0.010

Single Pulse

0.001

10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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