TIP31F 查看數據表（PDF） - Inchange Semiconductor

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TIP31F

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

TIP31F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A

VBE(on) Base-Emitter On Voltage

IC= 3A; VCE= 4V

ICES

Collector Cutoff Current

VCE= 200V; VEB= 0

ICEO

Collector Cutoff Current

VCE= 90V; IB=B 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

hFE-2

DC Current Gain

IC= 3A ; VCE= 4V

fT

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V

MIN MAX UNIT

160

V

2.5

V

1.8

V

0.2

mA

0.3

mA

1.0

mA

25

5

3

MHz

isc Website：www.iscsemi.cn

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