2N5660 查看數據表（PDF） - Inchange Semiconductor
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2N5660 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5660 2N5661
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·High speed switching and linear amplifier
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5660
2N5661
Open emitter
VCEO
Collector-emitter voltage
2N5660
2N5661
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=100℃
Ta=25℃
VALUE
250
400
200
300
6
2.0
0.5
20
2
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
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