2SA1242 查看數據表（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

零件编号

产品描述 (功能)

生产厂家

2SA1242

Silicon PNP transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1242

Rev.E May.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Peak Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

ICM

PC

PC(Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

-35

-20

-8.0

-5.0

-0.5

-8.0

1.0

10

150

-55～150

单位

Unit

V

V

V

A

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCEO IC=-10mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-1.0mA IC=0

Collector Cut-Off Current

ICBO VCB=-35V IE=0

Emitter Cut-Off Current

IEBO VEB=-8.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE(1)

hFE(2)

VCE=-2.0V

VCE=-2.0V

VCE(sat) IC=-4.0A

IC=-0.5A

IC=-4.0A

IB=-0.1A

Base to Emitter Voltage

VBE VCE=-2.0V IC=-4.0A

Transition Frequency

Collector output capacitance

fT VCE=-2.0V IC=-0.5A

Cob

VCB=-10V

f=1.0MHz

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-20

V

-8.0

V

-0.1 μA

-0.1 μA

100

320

70

-1.0 V

-1.5 V

170

MHz

62

pF

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