2SA1201 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
零件编号
产品描述 (功能)
生产厂家
2SA1201 Datasheet PDF : 4 Pages
| |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1201 TRANSISTOR (PNP)
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-120
-120
-5
-0.8
0.5
150
-55-150
R θJA
Thermal Resistance from Junction to Ambient 250
Unit
V
V
V
A
W
℃
℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=-1mA,IE=0
V(BR)CEO IC=-10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
Emitter cut-off current
ICBO
VCB=-120V,IE=0
IEBO
VEB=-5V,IC=0
DC current gain
hFE
VCE=-5V,IC=-100mA
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat) IC=-500mA,IB=-50mA
VBE
VCE=-5V,IC=-500mA
Transition frequency
fT
VCE=-5V,IC=-100mA
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
O
Range
80-160
Marking
DO
Min Typ Max Unit
-120
V
-120
V
-5
V
-0.1 μA
-0.1 μA
80
240
-1
V
-1
V
120
MHz
30
pF
Y
120-240
DY
www.cj-elec.com
1
D,Oct,2015
Share Link: 