2SA1327 查看數據表（PDF） - New Jersey Semiconductor
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2SA1327 Datasheet PDF : 2 Pages
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JbE.rn.i~Condii.ctot L/^ioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1327
DESCRIPTION
• Low Collector Saturation Voltage-
: VcE<satr -0.5V(Max.)@lc= -8A
• High DC Current Gain-
: hFE= 70(Min.)@ lc= -8A
APPLICATIONS
• Strobe flash applications.
• Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
lo
Collector Current-Continuous
-10
A
ICM
Collector Current-Pulse
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
@T3=25'C
PC
Collector Power Dissipation
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-2
A
2
W
20
150
'C
-55-150 •c
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-220Fa package
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mm
DIM MIN MAX
A 16.&5 17.15
n».65 B S.&4 10.10
C
4.35
D
0.75
0.90
F 3..20 3.40
G 6.90 7.20
H 3.30 4.20
J 0.45 0.75
K 13.35 13.80
L 1.10 1.30
N 4.93 5.18
Q 4.S5 5.15
R 2.56 3.25
S 2.70 2.90
U 1.75 2.05
V 1.30 1.50
NJ Semi-Conductors reserves the right to change test eonditions. parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at ihe time of going
to press. I louever. N.I Semi-Conductors assumes no responsibility for nn\s or omissions discovered in its use.
N.I Senii-C'ondiictors encourages customers to verify that ilata.shecls are current before placing orders.
Quality Semi-Conductors
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