2SA1740(2012) 查看數據表（PDF） - Unisonic Technologies

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2SA1740
(Rev.:2012)

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SA1740

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( TA=25℃, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-400

V

Collector-Emitter Voltage

VCEO

-400

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-200

mA

Collector Current (PULSE)

ICP

-400

mA

Collector Power Dissipation

PC

0.5

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)

PARAMETER

Collect-Base Breakdown Voltage

Collect-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collect-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Reverse Transfer Capacitance

Gain-Bandwidth Product

Turn-On Time

Turn-Off Time

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(SAT)

VBE(SAT)

COB

CRE

fT

tON

tOFF

„ CLASSIFICATION OF hFE

TEST CONDITIONS

IC= -10μA,IE=0

IC= -1mA,IB=0, RBE=∞

IE= -10μA,IC=0

VCB= -300V,IE=0

VEB= -4V,IC=0

VCE= -10V, Ic= -50mA

IC= -50mA,IB= -5mA

IC= -50mA,IB= -5mA

VCB=-30V, f=1MHz

VCB =-30V,f=1MHz

VCE= -30V,IC= -10mA

See test circuit

See test circuit

MIN TYP MAX UNIT

-400

V

-400

V

-5

V

-0.1 μA

-0.1 μA

60

200

-0.8

V

-1.0 V

5

pF

4

pF

70

MHz

0.25

μs

5.0

μs

RANK

RANGE

D

60-120

E

100-200

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R208-026,C

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