2SB1105 查看數據表（PDF） - New Jersey Semiconductor
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2SB1105 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25mA; RBE= °°
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50mA; lc= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc=-1.5A;lB=-3mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -3A;IB= -30mA
VeE(sat)-l Base-Emitter Saturation Voltage
lc=-1.5A; !B=-3mA
VeE(sat)-2 Base-Emitter Saturation Voltage
lc= -3A; IB= -30mA
ICBO
Collector Cutoff Current
VCB=-120V; IE=0
ICEO
Collector Cutoff Current
VCE=-100V;RBE= °°
hFE
DC Current Gain
lc=-1.5A;VCE=-3V
VECF
C-E Diode Forward Voltage
IF=3A
Switching Times
'on
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-1.5A, IB1=-IB2= -3mA
2SB1105
MIN TYP. MAX UNIT
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100 M A
-10
uA
1000
20000
3.0
V
1.0
us
3.0
us
1.0
Us
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