2SB1260 查看數據表（PDF） - Galaxy Semi-Conductor
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2SB1260 Datasheet PDF : 4 Pages
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Production specification
Power Transistor(-80V,-1A)
2SB1260
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-50μA IE=0
-80
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0
-80
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA IC=0
-5
V
Collector cut-off current
ICBO
VCB=-60V IE=0
-1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-1 μA
DC current gain
hFE
VCE=-3V IC=-0.1A
120
390
Collector-emitter saturation voltage VCE(sat) IC=-500mA IB=-50mA
-0.4 V
Output Capacitance
Cobo
VCB=-10V f=1.0MHz IE=0 -
20
pF
CLASSIFICATION HFE
Rank
Range
Q
120-270
R
180-390
E045
Rev.A
www.gmicroelec.com
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