2SC1766 查看數據表（PDF） - Willas Electronic Corp.

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2SC1766

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

S1O.0ATS-U8R9FAPCElaMsOtUiNcT-ESCnHcOTaTpKsY uBAlaRRtIeERTRrEaCnTIsFIiEsRtSo-2r0sV- 200V

SOD-123+ PACKAGE

FM120-M+

2SC1766 THRU

FM1200-M+

Pb Free Product

Features

O u t l i n e D r a w i n g • Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

Package outline

S O T- 8 9 SOD-123H

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

0.071(1.8)

0.056(1.4)

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing.1co8d1e (s4uf.f6ix0"H) "

Mechanical data .173(4.39)

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

y •

Terminals

:Plated

terminals,

sol.d0e6ra1bRle EpeFr

,

MIL-STD-750

Method 2026 (1.55)REF

r • Polarity : Indicated by cathode band

a • Mounting Position : Any

• Weight : Approximated 0.011 gram

0.031(0.8) Typ.

.063(1.60)

.055(1.40)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

lim For capacitive load, derate current by 20%

.167(4.25)

RATINGS

.M1a5rk4in(g3C.9od1e)

Maximum Recurrent Peak Reverse Voltage

e Maximum RMS Voltage

.102(2.60)

SYMBOL FM120-MH FM130-MH FM.01490-1M(H2F.M31050)-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

12

13

14

15

16

.02

VRRM

3

(

0

.

2508

)

30

40

50

60

.016(0.40)

VRMS

14

21

28

35

42

18

10

115 120

80

100

150

200 V

56

70

105

140 V

r Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200 V

Maximum Average Forward Rectified Current

IO

P .047(1.2)

1.0

A

Peak Forw.a0rd3S1ur(g0e .C8ur)rent 8.3 ms single half sine-wave IFSM

superimposed on rated load (JEDEC method)

30

A

Typical Thermal Resistance (Note 2)

RΘJA

40

℃

Typical Junction Capacitance (Note 1)

Operating Temperature Range .060TYP

Storage Temperature Range (1.50)TYP

CJ

TJ

TSTG

-55 to +125

.197(0.52)

.013(0.32)

120

-55 to +150

- 65 to +1.70517(0.44)

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

.118TYSPYMBOL

.014(0.35)

FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH

FM1150-MH FM1200-MH

U

(3.0)TYPVF

0.50

0.70

0.85

0.9

0.92 V

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0.5

m

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-20012-06

Dimensions in inches and (millimeters)

Rev.C

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

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