2SB1530 查看數據表（PDF） - New Jersey Semiconductor
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2SB1530 Datasheet PDF : 2 Pages
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^>tmi-Conauckoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA.
. One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1530
DESCRIPTION
• Collector-EmitterBreakdownVoltage-
: V(BR)CFO=-150V(Min.)
• Complement to Type 2SD2337
APPLICATIONS
• Designed for low frequency power amplifier color TV
vertical deflection output applications.
PTH 1 B*s*
2 Collector
3 hitter
TO-220Fm r*rk»(>
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL !
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCFO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
lev
Collector Current-Peak
Collector Power Dissipation
"c
Collector Power Dissipation
@T;=25-C
T.
Junction Temperature
T5tg
Storage Temperature Range
-2
A
-5
A
1b
20
150
<-'
-45-150
»,.
mm
DIM WIN MAX
& 16.85 17.15
B
9,54 10.10
c
4.35
4.65
D 075 0.9-0
F
3.20
3.40
ij <5.96~~ ? 2il
H ».80 4.20
J 0.45 0.75
K 13.35 11.80
L
1.10
1.30
M
4.98
5.18
Q 4.S5
5.15
R
26.S
3.25
5
2,70
2.90
jj
1.75
2.05
u
1.30
1.50
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Quality Semi-Conductors
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