2SB1530 查看數據表（PDF） - New Jersey Semiconductor
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2SB1530 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(RR)CtO Collector-Eiriitter Breakdown Voltage.. lc= 10mA; RB£- "=•
V/BRjEBO Emitter-Base Breakdown Voltage
IE= -bmA; ic- o
VcE(sat) Collector-Emitter Saturation Voltage
lc= 0 5A; IB= -50mA
VflFioni Base-Emitter On Voltage
lc= -50mA; Vc-:^ -4V
ICBC
Collector Cutoff Current
VCB=-120V; IE=0
hpF-'
DC Current Gain
lc= -50mA, VCE= -4V
hpf..?
DC Current Gain
Notes:
-1 Classifications
B
•c
IC=-0.5A. VCE=-10V
60-120 100-200
E.! Pulse test
2SB1530
MIN TYP. MAX UNIT
-150
V
-6
V
-30 V
-1 0 V
•1 u A
60
200
60
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