A1879 查看數據表（PDF） - Inchange Semiconductor

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A1879

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1879

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=-3.5A; IB=-0.35A

VBEsat Base-emitter saturation voltage

IC=-3.5A; IB=-0.35A

ICBO

Collector cut-off current

ICEO

At rated volatge

IEBO

Emitter cut-off current

At rated volatge

hFE

DC current gain

IC=-3.5A ; VCE=-2V

fT

Transition frequency

IC=-0.7A ; VCE=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-3.5A;IB1=-IB2=-0.35A ,

RL=8Ω;VBB2=-4V

MIN TYP. MAX UNIT

-80

V

-0.3

V

-1.2

V

-0.1 mA

-0.1 mA

70

50

MHz

0.3 μs

1.5 μs

0.2 μs

2

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