MITSUBISHI Nch POWER MOSFET
FS30SM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
150
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
68
92
mΩ
—
1.02 1.38
V
—
29
—
S
—
2300
—
pF
—
320
—
pF
—
130
—
pF
—
35
—
ns
—
58
—
ns
—
110
—
ns
—
65
—
ns
—
1.0
1.5
V
—
—
1.78 °C/W
—
110
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
50
7V 6V
PD = 70W
40
30
MAXIMUM SAFE OPERATING AREA
3
2
TC = 25°C
Single Pulse
102
7
5
3
2
tw = 10ms
101
7
100ms
5
3
2
1ms
100
10ms
7
100ms
5
DC
33 5 7101 2 3 5 7 102 2 3 5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 20V
16
10V 7V
6V
TC = 25°C
Pulse Test
5V
12
20
5V
10
TC = 25°C
Pulse Test
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
8
4
4V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999