FQAF10N80 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQAF10N80 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
V
GS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.6
V = 10V
GS
VGS = 20V
1.2
0.8
※ Note : T = 25℃
J
0.4
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3600
3200
2800
2400
2000
1600
1200
800
400
0
10-1
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
oss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 160V
10
DS
VDS = 400V
8
V = 640V
DS
6
4
2
※ Note : I = 9.8A
D
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, April 2002
Share Link: 