HEF4104BP,652 查看數據表（PDF） - NXP Semiconductors.
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HEF4104BP,652 Datasheet PDF : 14 Pages
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NXP Semiconductors
HEF4104B
Quad low-to-high voltage translator with 3-state outputs
10. Static characteristics
Table 6. Static characteristics
VDD(A) = VDD(B); VSS = 0 V; VI = VSS or VDD(A); unless otherwise specified.
Symbol Parameter
Conditions
VDD[1]
Tamb = −40 °C
Min Max
Tamb = +25 °C
Min Max
Tamb = +85 °C
Min Max
Unit
VIH
HIGH-level
input voltage
|IO| < 1 μA
5V
10 V
3.5 -
7.0 -
3.5 -
7.0 -
3.5 - V
7.0 - V
15 V
11.0
-
11.0
-
11.0
-V
VIL
LOW-level
input voltage
|IO| < 1 μA
5V
10 V
-
1.5
-
1.5
-
1.5 V
-
3.0
-
3.0
-
3.0 V
15 V
-
4.0
-
4.0
-
4.0 V
VOH
HIGH-level
output voltage
|IO| < 1 μA
5V
10 V
4.95 -
9.95 -
4.95 -
9.95 -
4.95 - V
9.95 - V
15 V
14.95 - 14.95 - 14.95 - V
VOL
LOW-level
output voltage
|IO| < 1 μA
5V
10 V
- 0.05 - 0.05 - 0.05 V
- 0.05 - 0.05 - 0.05 V
15 V
- 0.05 - 0.05 - 0.05 V
IOH
HIGH-level
output current
VO = 2.5 V
VO = 4.6 V
VO = 9.5 V
VO = 13.5 V
IOL
LOW-level
output current
VO = 0.4 V
VO = 0.5 V
VO = 1.5 V
II
input leakage current
IDD
supply current
all valid input
combinations;
IO = 0 A
5V
−1.7 - −1.4 - −1.1 - mA
5V
−0.52 - −0.44 - −0.36 - mA
10 V
−1.3 - −1.1 - −0.9 - mA
15 V
−3.6 - −3.0 - −2.4 - mA
5V
0.52 - 0.44 - 0.36 - mA
10 V
1.3
-
1.1
-
0.9
- mA
15 V
3.6
-
3.0
-
2.4
- mA
15 V
- ±0.3 - ±0.3 - ±1.0 μA
5 V [2] -
20
-
20
-
150 μA
10 V
-
40
-
40
-
300 μA
15 V
-
80
-
80
-
600 μA
IOZ
OFF-state
output current
CI
input capacitance
HIGH level;
VO = VDD(B)
LOW level;
VO = VSS
digital inputs
15 V
15 V
-
-
1.6
-
1.6
- 12.0 μA
- −1.6 - −1.6 - −12.0 μA
-
-
-
7.5
-
- pF
[1] VDD is the same as VDD(A) and VDD(B).
[2] IDD is the combined current of IDD(A) and IDD(B).
HEF4104B_7
Product data sheet
Rev. 07 — 16 December 2009
© NXP B.V. 2009. All rights reserved.
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