TN6716A 查看數據表（PDF） - Fairchild Semiconductor

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TN6716A

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO Collector-Emitter Breakdown Voltage

BVCBO Collector-Base Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 1 mA

IC = 100 µA

IE = 1 mA

VCB = 40 V

VEB = 5 V

60

V

60

V

5

V

100 nA

10

uA

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat) Collector-Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

IC = 50 mA, VCE = 1 V

IC = 250 mA, VCE = 1 V

IC = 500 mA, VCE = 1 V

IC = 250 mA, IB = 10 mA

IC = 250 mA, IB = 25 mA

IC = 250 mA, VCE = 1.0 V

80

-

50 250

20

0.5

V

0.35

1.2

V

SMALL SIGNAL CHARACTERISTICS

Ccb

Output Capacitance

hfe

Small Signal Current Gain

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

VCB = 10 V, IE = 0, f = 1MHz

IC = 200 mA,VCE = 5 V,f=20MHz

2.5

30

pF

25 MHz

© 1997 Fairchild Semiconductor

Pr38 TN6716A.SAM revC

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