KSC5027 查看數據表（PDF） - SavantIC Semiconductor
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KSC5027 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA;IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A
VBEsat
ICBO
IEBO
hFE-1
hFE-2
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
IC=1.5A ;IB=0.3A
VCB=800V ;IE=0
VEB=5V; IC=0
IC=0.2A ; VCE=5V
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=10V
Cob
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5 IB1=-2.5IB2=2A
VCC=400V
RL=200@
hFE-1 Classifications
N
R
O
10-20
15-30
20-40
Product Specification
KSC5027
MIN
800
1100
7
10
8
TYP.
15
60
MAX
2.0
1.5
10
10
40
UNIT
V
V
V
V
V
µA
µA
MHz
pF
0.5
µs
3.0
µs
0.3
µs
2
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