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零件编号
产品描述 (功能)
2SK2719 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
Toshiba
2SK2719 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
Common source
Tc
=
25°C
Pulse test
4
8
10
3
5.5
6
5.25
5
4.75
2
4.5
1
VGS
=
4 V
0
0
4
8
12
16
20
Drain-source voltage V
DS
(V)
I
D
– V
GS
6
Common source
VDS
=
20 V
5
Pulse test
Tc
= −
55°C
25
4
3
100
2
1
0
0
2
4
6
8
10
12
Gate-source voltage V
GS
(V)
2SK2719
I
D
– V
DS
5
Common source
8
Tc
=
25°C
10
6
Pulse test
4
5.75
3
5.5
2
5.25
5
1
VGS
=
4.5 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
V
DS
– V
GS
25
Common source
Tc
=
25°C
Pulse test
20
15
ID
=
3 A
10
1.5
5
0.8
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
10
5
3
0.1
0.5
0.3
0.1
0.1
⎪
Y
fs
⎪
– I
D
Tc
= −
55°C
25
100
Common source
VDS
=
20 V
Pulse test
0.3
1
3
10
30
Drain current I
D
(A)
R
DS (ON)
– I
D
30
Common source
Tc
=
25°C
VGS
=
10 V
Pulse test
10
5
3
1
0.5
0.1
0.3
1
3
10
30
Drain current I
D
(A)
3
2013-11-01
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