1PS79SB70 查看數據表（PDF） - TY Semiconductor

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1PS79SB70

SCHOTTKY BARRIER DIODE

TY Semiconductor 

Product specification

1PS79SB70

Features

Low forward voltage

High breakdown voltage

Guard ring protected

Ultra small plastic SMD package.

Low capacitance.

SOD-523

1.2+0.1

-0.1

+

Unit: mm

0.6+0.1

-0.1

-

1.6+0.1

-0.1

0.77max

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forwrad current

storage temperature

junction temperature

operating ambient temperature

Symbol

VR

IF

IFSM

IFSM

Tstg

Tj

Tamb

Conditions

tp 1 s;ä 0.5

tp < 10 ms

Min

Max

Unit

70

V

70

mA

70

mA

100

mA

-65

+150

150

-65

+150

Electrical Characteristics Ta = 25

Param eter

Sym bol

continuous forward voltage

VF

IR

capacitance reverse current

diods capacitance

Cd

Note

1. Pulse test: tp = 300 s, ä = 0.02.

C o n d itio n s

IF = 1 m A

IF = 10 m A

IF = 15 m A

VR = 50 V, note 1

VR = 70 V, note 1

VR = 0 V, f = 1 MHz

Max

410

750

1

100

10

2

U n it

mV

mV

V

nA

A

pF

Marking

Marking

G

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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