BC640 查看數據表（PDF） - Zetex => Diodes
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BC640 Datasheet PDF : 1 Pages
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 1 Amp continuous current
* Ptot= 800 mW
BC640
E
C
B
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
-80
-80
-5
-1
800
-55 to +150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-10µA, IC=0
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.5 V
VCB=-30V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1.0 V
IC=-500mA,VCE=-2V*
Static Forward Current hFE
25
Transfer Ratio
40
160
25
Transition
fT
Frequency
200
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=-5mA, VCE=-2V*
IC=-150mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-50mA, VCE=-2V
f=100MHz
3-19
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