BDW41 查看數據表（PDF） - New Jersey Semiconductor
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BDW41 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDW41
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VoEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB= 0
VcE(satH Collector-Emitter Saturation Voltage lc=5A;lB=10mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=10A;lB=50mA
VsE(on) Base-Emitter On Voltage
lc=10A;VCE=4V
80
V
2.0
V
3.0
V
3.0
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
1.0
mA
I CEO Collector Cutoff Current
IEBO
Emitter Cutoff Current
hpE-1
DC Current Gain
hFE-2
DC Current Gain
fr
Current-Gain—Bandwidth Product
COB
Output Capacitance
VCE= 40V; IB= 0
VEB= 5V; lc= 0
lc= 5A; VCE= 4V
IC=10A;VCE=4V
1000
250
lc=3A;VcE=3V;ftest=1MHz
4
!E= 0; VCB= 10V; ftest= 0.1MHz
2.0
mA
2.0
mA
MHz
200
pF
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