BDW43 查看數據表（PDF） - New Jersey Semiconductor
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BDW43 Datasheet PDF : 2 Pages
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'j
\-S
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW43
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:VCEO(sus)=120V(Min)
• High DC Current Gain
: hFE=1000(Min)@lc=5A
• Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ lc= 5.0A
= 3.0V(Max.)@lc=10A
• Complement to Type BDW48
APPLICATIONS
• Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VOBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
TS|g
Storage Temperature Range
0.5
A
85
W
150
°C
-55-150
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
1.47 °c/w
t2
H< s -
i111
123
PIN 1.BASE
2. COLLECTOR
3. BETTER
TO-220C package
*— B—H
+i
,
fi fxoyj:K3fc
A
&
— 1506-
1!K
I
soi- •
h i
-*j G
H•[— J
! "*-
1Tl
i
^1
•1
mm
DIM MIN MAX
A 15.70 15.90
B d.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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