BLV194 查看數據表（PDF） - Philips Electronics
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BLV194 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLV194
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
f
VCE
PL
Gp
OPERATION (MHz)
(V)
(W)
(dB)
CW, class-AB
900
12.5
16
≥7
DESCRIPTION
NPN silicon planar epitaxial transistor alfpage
intended for common emitter
class-AB operation in the 900 MHz
communications band.
1
The transistor has a SOT171 flange
envelope with a ceramic cap.
3
5
All leads are isolated from the
mounting base.
2
handbook, halfpage
4
6
c
b
MBB012
e
ηC
(%)
≥ 50
PINNING - SOT171
PIN
DESCRIPTION
1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
January 1993
2
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