BLF378 查看數據表（PDF） - Philips Electronics

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BLF378

VHF push-pull power MOS transistor

Philips Electronics 

Philips Semiconductors

VHF push-pull power MOS transistor

Product specification

BLF378

APPLICATION INFORMATION

Class-AB operation

RF performance in CW operation in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless

otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω (VDS = 50 V).

MODE OF OPERATION

f

(MHz)

VDS

(V)

IDQ

(A)

PL

(W)

Gp

∆Gp

ηD

(dB)

(dB)(1)

(%)

CW, class-AB

225

50

2 × 0.5

250

>14

<1

>50

typ. 16

typ. 0.6

typ. 55

225

45

2 × 0.5

250

typ. 15

typ. 1

typ. 60

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized

input / 25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF378 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the

conditions: VDS = 50 V; f = 225 MHz at rated output power.

1998 Jul 29

6

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