BLF378 查看數據表（PDF） - Philips Electronics
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BLF378 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF378
20
handbook, halfpage
(1)
Gp
(2)
(dB)
10
MGE614
60
handbook, halfpage
ηD
(%)
40
20
(1)
(2)
MGE612
0
0
100
200
300
PL (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.9 Power gain as a function of load power;
typical values per section.
0
0
100
200
300
PL (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.10 Efficiency as a function of load power;
typical values per section.
400
handbook, halfpage
PL
(W)
300
200
(1)
(2)
MGE613
100
0
0
5
10
15
Pi (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.11 Load power as a function of input power;
typical values per section.
1998 Jul 29
7
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