BUZ30A 查看數據表（PDF） - Siemens AG
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BUZ30A Datasheet PDF : 9 Pages
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BUZ 30A
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
50
Ptot = 125W
A
l kj i h g
ID
40
35
30
25
20
15
10
5
0
0
2
4
6
f
VGS [V]
a 4.0
b 4.5
e c 5.0
d 5.5
e 6.0
f 6.5
d g 7.0
h 7.5
i 8.0
c j 9.0
k 10.0
l 20.0
b
a
8 V 11
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
45
A
ID
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.40
a
b
c
d
e
Ω
RDS
0.32
(on)
0.28
0.24
0.20
0.16
0.12
0.08
f
g
h
j
i
k
l
VGS [V] =
0.04 a b c d e f
4.0 4.5 5.0 5.5 6.0 6.5
0.00
ghi j
7.0 7.5 8.0 9.0
kl
10.0 20.0
0 4 8 12 16 20 24 28 32 A 40
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
20
S
gfs
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 A 40
ID
Semiconductor Group
6
07/96
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