BUK9213-30A 查看數據表（PDF） - NXP Semiconductors.
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BUK9213-30A Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK9213-30A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 100 °C; VGS = 5 V; see Figure 1
Tmb = 25 °C; VGS = 5 V; see Figure 1;
see Figure 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
Tmb = 25 °C; see Figure 2
Tmb = 25 °C
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
pulsed; tp ≤ 10 µs; Tmb = 25 °C
ID = 55 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by bondwires.
100
ID
(A)
75
50
25
03nf64
capped at 55 A due to bondwires
120
Pder
(%)
80
40
Min
-
-
-15
[1] -
[1] -
[2] -
-
Max Unit
30 V
30 V
15 V
54 A
75 A
55 A
311 A
-
150 W
-55 175 °C
-55 175 °C
[1] -
[2] -
-
75 A
55 A
311 A
-
467 mJ
03na19
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9213-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
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