JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
DAN202 SWITCHING DIODE
FEATURES
High Speed
High Reliability
Suitable for High Packing Density Layout
APPLICATIONS
High Speed Switching
MARKING: N
SOT-23
N
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR
DC Blocking Voltage
IO
Continuous Forward Current
IFM
Peak Forward Current
IFSM
Non-repetitive Peak Forward Surge Current@t= 8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
80
100
300
2
250
500
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=70V
IF=100mA
VR=6V,f=1MHz
IF= IR=5mA, VR=6V
Min Typ Max Unit
80
V
0.1
μA
1.2
V
3.5
pF
4
ns
www.cj-elec.com
1
B,Oct,2014