IRF343 查看數據表（PDF） - Inchange Semiconductor
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IRF343 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF343
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 350V; VGS= 0
VSD
Diode Forward Voltage
IF= 10A; VGS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN
TYP MAX UNIT
350
V
2
4
V
0.8
Ω
±100
nA
250
uA
2.0
V
1250 1600
pF
300
450
pF
80
150
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=200V,ID=10A
RG=9.1Ω
Tf
Fall Time
MIN
TYP MAX UNIT
17
21
ns
27
41
ns
45
75
ns
20
36
ns
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