HZU6.2L 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

HZU6.2L

Silicon Epitaxial Planar Zener Diode for Surge Absorb

Hitachi -> Renesas Electronics 

HZU6.2L

Absolute Maximum Ratings (Ta = 25°C)

Item

Power dissipation

Junction temperature

Storage temperature

Note 1. See Fig.2.

Symbol

Pd *1

Tj

Tstg

Value

Unit

150

mW

150

°C

-55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Zener voltage

VZ

Reverse current

IR

Dynamic resistance r d

5.80 





6.60 V

100 nA

30 Ω

IZ = 5 mA, 40ms pulse

VR = 5.0V

IZ = 5 mA

2

Share Link: