UMZ1N 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

UMZ1N

Dual General Purpose Transistors

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

Dual General Purpose Transistors

NPN/PNP Duals (Complimentary)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

We declare that the material of product compliance with RoHS requirements.

3

2

1

Q1

Q2

4

5

6

DEVICE MARKING

BF

UMZ1N

6

5

4

1

2

3

SOT-363/SC-88

Q1 MAXIMUM RATING (Ta=25 )

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Q2 MAXIMUM RATING (Ta=25 )

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Q1 Q2 MAXIMUM RATING (Ta=25 )

CHARACTERISTIC

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* Total Raing. FR-5 = 1.0 x 0.75 x 0.062 in

2012. 02. 21

Revision No : 0

SYMBOL

V CBO

V CEO

V EBO

IC

IB

SYMBOL

V CBO

V CEO

V EBO

IC

IB

SYMBOL

PC *

Tj

Tstg

RATING

50

45

6

100

20

RATING

-50

-45

-6

-100

-20

RATING

380

150

-55 ~ 150

UNIT

V

V

UNIT

V

V

UNIT

1/5

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