MHPM7B20A60A 查看數據表（PDF） - Motorola => Freescale

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MHPM7B20A60A

Hybrid Power Module

Motorola => Freescale 

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating

Symbol

BRAKE CIRCUIT

IGBT Reverse Voltage

Gate-Emitter Voltage

Continuous IGBT Collector Current

Peak IGBT Collector Current (PW = 1.0 ms) (2)

IGBT Power Dissipation

VCES

VGES

IC

IC(pk)

PD

Diode Reverse Voltage

Continuous Output Diode Current

Peak Output Diode Current (PW = 1.0 ms) (2)

TOTAL MODULE

VRRM

IF

IF(pk)

Isolation Voltage – (47–63 Hz, 1.0 Minute Duration)

Ambient Operating Temperature Range

Operating Case Temperature Range

Storage Temperature Range

Mounting Torque

VISO

TA

TC

Tstg

–

Value

600

± 20

20

40

78

600

20

40

2500

– 40 to + 85

– 40 to + 90

– 40 to +150

6.0

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (VRRM = 600 V)

Forward Voltage (IF = 20 A)

Thermal Resistance (Each Die)

OUTPUT INVERTER

IR

–

VF

–

RθJC

–

10

50

1.1

1.5

–

2.9

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

IGES

–

–

± 20

Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)

ICES

TJ = 25°C

–

TJ = 125°C

–

–

200

–

1.0

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

VGE(th)

4.0

6.0

8.0

Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)

V(BR)CES

600

700

–

Collector-Emitter Saturation Voltage (IC = 20 A, VGE = 15 V)

VCE(SAT)

–

2.5

3.5

Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)

Cies

–

4400

–

Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V)

QT

–

145

–

Fall Time – Inductive Load

(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)

tfi

–

250

500

Turn-On Energy

(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)

E(on)

–

–

2.5

Turn-Off Energy

(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)

E(off)

–

–

2.5

Diode Forward Voltage (IF = 20 A, VGE = 0 V)

Diode Reverse Recovery Time

(IF = 20 A, V = 300 V, dI/dt = 50 A/µs)

VF

–

1.3

2.0

trr

–

170

200

Diode Stored Charge (IF = 20 A, V = 300 V, di/dt = 50 A/µs)

Qrr

–

Thermal Resistance – IGBT (Each Die)

RθJC

–

Thermal Resistance – Free-Wheeling Diode (Each Die)

RθJC

–

(2) 1.0 ms = 1.0% duty cycle

450

600

–

1.5

–

2.9

Unit

V

V

A

A

W

V

A

A

VAC

°C

°C

°C

lb–in

Unit

µA

V

°C/W

µA

µA

mA

V

V

V

pF

nC

ns

mJ

mJ

V

ns

nC

°C/W

°C/W

MHPM7B20A60A

2

MOTOROLA

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