MJ11011 查看數據表（PDF） - Inchange Semiconductor

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MJ11011

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJ11011

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= -20A

·Low Collector Saturation Voltage-

: VCE (sat)= -3.0V(Max.)@ IC= -20A

·Complement to Type MJ11012

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continunous

-30

A

ICM

Collector Current-Peak

-50

A

IB

Base Current-Continunous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-1

A

200

W

200

℃

-65~+200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

0.87 ℃/W

isc Website：www.iscsemi.cn

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