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MJF44H11G(2006) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MJF44H11G
(Rev.:2006)
ON-Semiconductor
ON Semiconductor 
MJF44H11G Datasheet PDF : 5 Pages
1 2 3 4 5
MJF44H11 (NPN),
MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
Low CollectorEmitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
CollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ EmitterBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak
VCEO
80
Vdc
VEB
5
Vdc
IC
10
Adc
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25°C
Derate above 25°C
PD
36
W
1.67
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TA = 25°C
Derate above 25°C
PD
2.0
W
0.016
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg 55 to 150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, JunctiontoCase
RqJC
3.5
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, JunctiontoAmbient RqJA
62.5
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 Rev. 4
http://onsemi.com
SILICON POWER TRANSISTORS
10 AMPERES
80 VOLTS, 36 WATTS
1
23
ISOLATED TO220
CASE 221D
STYLE 2
MARKING DIAGRAM
F4xH11G
AYWW
F4xH11 = Specific Device Code
x = 4 or 5
G
= PbFree Package
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF44H11 TO220 FULLPACK 50 Units/Rail
MJF44H11G TO220 FULLPACK 50 Units/Rail
(PbFree)
MJF45H11 TO220 FULLPACK 50 Units/Rail
MJF45H11G TO220 FULLPACK 50 Units/Rail
(PbFree)
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJF44H11/D

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