MJF45H11G 查看數據表（PDF） - ON Semiconductor
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MJF45H11G Datasheet PDF : 5 Pages
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MJF44H11 (NPN), MJF45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
MJF44H11
MJF45H11
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJF44H11
MJF45H11
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJF44H11
MJF45H11
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJF44H11
MJF45H11
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJF44H11
MJF45H11
Symbol
VCEO(sus)
ICES
IEBO
VCE(sat)
VBE(sat)
hFE
Ccb
fT
td + tr
ts
tf
Min
Typ
Max
80
−
−
−
−
1.0
−
−
10
−
−
1.0
−
−
1.5
60
−
−
40
−
−
−
130
−
−
230
−
−
50
−
−
40
−
−
300
−
−
135
−
−
500
−
−
500
−
−
140
−
−
100
−
Unit
Vdc
mA
mA
Vdc
Vdc
−
pF
MHz
ns
ns
ns
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 1. Thermal Response
50 100 200
500 1.0 k
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